rf power mosfets n - channel enhancement mode 200v 300w 45mhz the ARF466FL is a rugged high voltage rf power transistor designed for scienti c, commercial, medical and industrial rf power ampli er applications up to 45 mhz. it has been optimized for both linear and high ef ciency classes of operation. ? speci ed 150 volt, 40.68 mhz characteristics: ? output power = 300 watts. ? gain = 16db (class ab) ? ef ciency = 75% (class c) ? low cost flangeless rf package. ? low vth thermal coef cient. ? low thermal resistance. ? optimized soa for superior ruggedness. ARF466FL 050-4928 rev d 5-2010 ARF466FL microsemi website - http://www.microsemi.com caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. symbol parameter min typ max unit r jc junction to case 0.13 c/w r jhs junction to sink (high ef ciency thermal joint compound and planar heat sink surface.) 0.27 maximum ratings all ratings: t c =25 c unless otherwise speci ed symbol parameter ratings unit v dss drain-source voltage 1000 v v dgo drain-gate voltage 1000 i d continuous drain current @ t c = 25c 13 a v gs gate-source voltage 30 v p d total power dissipation @ t c = 25c 1153 w t j , t stg operating and storage junction temperature range -55 to 175 c t l lead temperature: 0.063? from case for 10 sec. 300 static electrical characteristics symbol parameter min typ max unit bv dss drain-source breakdown voltage (v gs = 0v, i d = 250 a) 1000 v r ds(on) drain-source on-state resistance 1 (v gs = 10v , i d = 6.5a) 1.0 ohms i dss zero gate voltage drain current (v ds = 1000v, v gs = 0v) 25 a zero gate voltage drain current (v ds = 800v, v gs = 0v, t c = 125c) 250 i gss gate-source leakage current (v ds = 30v, v ds = 0v) 100 na g fs forward transconductance (v ds = 25v, i d = 6.5a) 3.3 7 9 mhos v gs(th) gate threshold voltage (v ds = v gs , i d = 1ma) 2 4 volts thermal characteristics g d s
dynamic characteristics ARF466FL 30 45 60 75 90 105 120 frequency (mhz) figure 1, typical gain vs frequency class c v dd = 150v p out = 150w 30 25 20 15 10 5 0 gain (db) symbol c iss c oss c rss t d(on) t r t d(off) t f characteristic input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time test conditions v gs = 0v v ds = 150v f = 1 mhz v gs = 15v v dd = 500 v i d = 13a @ 25c r g = 1.6 w min typ max 2000 165 75 12 10 43 10 unit pf ns functional characteristics symbol g ps h y test conditions f = 40.68 mhz v gs = 2.5v v dd = 150v p out = 300w no degradation in output power characteristic common source ampli er power gain drain ef ciency electrical ruggedness vswr 10:1 min typ max 14 16 70 75 unit db % 1 pulse test: pulse width < 380 s, duty cycle < 2% microsemi reserves the right to change, without notice, the speci cations and information contained herein. 1 10 100 1000 20 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 capacitance (pf) v ds , drain-to-source voltage (volts) figure 2, typical capacitance vs. drain-to-source voltage 10,000 1000 500 100 50 10 .1 1 10 100 200 i d , drain current (amperes) v ds , drain-to-source voltage (volts) figure 4, typical maximum safe operating area v gs , gate-to-source voltage (volts) figure 3, typical transfer characteristics i d , drain current (amperes) v ds > i d (on) x r ds (on)max. 250 sec. pulse test @ <0.5 % duty cycle t j = -55c t j = -55c t j = +125c t j = +25c t c =+25c t j =+175c single pulse operation here limited by r ds (on) c iss c oss c rss 52 10 5 1 .5 .1 1ms 10ms 100ms 100us 050-4928 rev d 5-2010
ARF466FL typical performance curves 050-4928 rev d 5-2010 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 10 -5 10 -4 10 -3 10 -2 10 1.0 -1 t c , case temperature (c) figure 5, typical threshold voltage vs temperature v ds , drain-to-source voltage (volts) figure 6, typical output characteristics 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 -50 -25 0 25 50 75 100 125 150 25 20 15 10 5 0 0 5 10 15 20 25 30 i d , drain current (amperes) v gs(th) , threshold voltage (normalized) 5.5v 4.5v 5v 6v v gs =15 & 10v 8v 4v figure 7b, transient thermal impedance model single pulse z jc , thermal impedance (c/w) rectangular pulse duration (seconds) figure 7a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.5 0.1 0.3 0.7 d = 0.9 0.05 table 1 - typical class ab large signal input - output impedance freq. (mhz) z ol ( 7 ) 2.0 13.5 27.1 40.7 65 18 - j 11 1.3 - j 5 .40 - j 2.6 .20 - j 1.6 .11 + j 0.6 30 - j 1.7 25.7 - j 9.8 18 - j 13.3 12 - j 12.6 6.2 - j 8.9 z in - gate shunted with 25 7 i dq = 100ma z ol - conjugate of optimum load for 300 w output at v dd = 150v z in ( 7 ) dissipated power (watts) t j (c) t c (c) z ext are the external thermal impedances: case to sink, sink to ambient, etc. set to zero when modeling only the case to junction. z ext .043 .058 .018 .022 .016 1.91
ARF466FL 050-4928 rev d 5-2010 microsemi?s products are covered by one or more of u.s. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,5 03,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157, 886 6,939,743 7,342,262 and foreign patents. us and foreign patents pending. all rights reserved. .330 .210 .210 .325 +/- .01 .570 ARF466FL 1.500 .100 .100 .300 .200 .005 .040 .320 1.250 .125r 4 pls .125dia 4 pls t3 package outline d s s s s g l1 c1 r1 r3 r4 r5 ARF466FL l2 l3 c3 c4 c7 c6 r2 c2 c8 c9 l4 150v + - rf output rf input 40.68 mhz test circuit + - bias 0-12v c5 tl1 c1 -- 2200 pf atc 700b c2-c5 -- arco 465 mica trimmer c6-c8 -- .1 mf 500v ceramic chip c9 -- 3x 2200 pf 500v chips cog l1 -- 3t #22 awg .25"id .25 "l ~55nh l2 -- 5t #16 awg .312" id .35"l ~176nh l3 -- 10t #24 awg .25"id ~.5uh l4 -- vk200-4b ferrite choke 3uh r1- r3 -- 1k 7 0.5w r4- r5 -- 1 7 1w smt tl1 -- 40 7 t-line 0.15 x 2" c1 is ~1.75" from r4-5. thermal considerations and package mounting: the rated power dissipation is only available when the package mounting surface is at 25c and the junction temperature is 175c. the thermal resistance between junctions and case mounting surface is 0.13 c/w. when installed, an additional thermal impedance of 0.17c/w between the package base and the mounting surface is typical. insure that the mounting surface is smooth and flat. thermal joint compound must be used to reduce the effects of small surface irregularities. use the minimum amount necessary to coat the surface. the heatsink should incorporate a copper heat spreader to obtain best results. the package design clamps the ceramic base to the heatsink. a clamped joint maintains the required mounting pressure while allowing for thermal expansion of both the base and the heat sink. four 4-40 (m3) screws provide the required mounting force. torque the mounting screws to 6 in-lb (0.68 n-m). hazardous material warning the white ceramic portion of the device between leads and mounting surface is beryllium oxide, beo. beryllium oxide dust is to xic when inhaled. care must be taken during handling and mounting to avoid damage to this area. these devices must never be thrown away with general industrial or domesti c waste.
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